[Ultrasharp Silicon Cantilevers] [MOLECULAR DEVICES AND TOOLS FOR NANOTECHNOLOGY]
[Ultrasharp Silicon Cantilevers]

[Image] Thin dielectric film with tunnel thickness on the top of epitaxial W (10nm) film, imaged in both atomic force (a1,b1) and current modes (a2,b2) is presented in figures.
Scan a1 and a2 size 185x185 nm.
Scan b1 and b2 size 375x130 nm.

The conditions of the measurument
Date22-May-1997
DeviceSolver-P4 (18 bit DAC, scanning area 20um x 20um)
ModeSFM contact mode
ProbeUltrasharp conductive cantilever with curve radius 30nm

The scans courtesy of Dr. G.M. Mikhailov, Institute of Microelectronics Technology Problems, Chernogolovka, Russia.
Non published.
Copyright © 1997, NT-MDT
Send comments to bykovav@ntmdt.zgrad.ru